作者: Simone Fabiano , Chiara Musumeci , Zhihua Chen , Antonino Scandurra , He Wang
关键词: Nanotechnology 、 Materials science 、 Field-effect transistor 、 Deposition (phase transition) 、 Transistor 、 Polymer 、 N channel 、 Monolayer 、 Optoelectronics 、 Electron mobility
摘要: Monolayer field-effect transistors based on a high-mobility n-type polymer are demonstrated. The accurate control of the long-range order by Langmuir-Schäfer (LS) deposition yields …