From monolayer to multilayer N-channel polymeric field-effect transistors with precise conformational order.

作者: Simone Fabiano , Chiara Musumeci , Zhihua Chen , Antonino Scandurra , He Wang

DOI: 10.1002/ADMA.201103800

关键词: NanotechnologyMaterials scienceField-effect transistorDeposition (phase transition)TransistorPolymerN channelMonolayerOptoelectronicsElectron mobility

摘要: Monolayer field-effect transistors based on a high-mobility n-type polymer are demonstrated. The accurate control of the long-range order by Langmuir-Schäfer (LS) deposition yields …

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