Numerical simulation of multiple polysilicon CVD reactors connected in series using CFD method

摘要: This study proposes a novel process in which multiple polysilicon chemical vapour deposition (CVD) reactors are connected series, and this setup is investigated using computational fluid dynamics (CFD). A three-dimensional CFD theoretical model proposed to describe the various transport phenomena reactor, validated by comparing reactor outlet temperatures of simulation results data obtained an industrial CVD reactor. was then used for analyzing production cost growth rate traditional processes. The show that processes lowest 0.091 mol/mol (9.1 mol %); maximum achieved 0.25 mol/mol (25 mol%). On other hand, if operation pressure increases from 101 607 kPa, average can be reduced 86.26 39.88 $/kg; raised 1.68 4.18 µm · min−1. In addition, compared with 1-reactor process, 2-reactor 21.9 % lower, 3-reactor 26.9 % lower. Finally, changing chlorine hydride feed 2 0.1 g/g (10 wt%) 0.02 g/g (2 wt%), 35.5 %.