Power MOSFET failure mechanisms
作者： P. Singh
DOI: 10.1109/INTLEC.2004.1401515
关键词: Power semiconductor device 、 MOSFET 、 Bipolar junction transistor 、 Power MOSFET 、 Engineering 、 Derating 、 Electronic engineering 、 Power electronics 、 Diode 、 Voltage 、 Electrical engineering
摘要: Power MOSFET failure mechanisms are reviewed and discussed with emphasis on the parasitic bipolar transistor (BJT) turn on. The first two result from high dV/sub DS//dt. third mechanism results slow reverse recovery of body diode fourth is a single event breakdown due to inadequate voltage derating MOSFET. A condition for BJT derived used discuss mechanisms.
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