Chlorine-doped CdS thin films from CdCl2-mixed CdS powder
作者： Husam H. Abu-Safe , Marouf Hossain , Hameed Naseem , William Brown , Abdullah Al-Dhafiri
DOI: 10.1007/S11664-004-0282-8
关键词: Thin film 、 Crystallographic defect 、 Doping 、 Analytical chemistry 、 Chemistry 、 Crystallite 、 Annealing (metallurgy) 、 Mineralogy 、 Electrical resistivity and conductivity 、 Electron mobility 、 Grain size
摘要: The CdS:Cl thin films have been prepared using thermally evaporated, CdCl2-mixed CdS powder at 200°C substrate temperature. percentage of CdCl2 in the mixture varied from 0% to 0.20%. electrical properties and grain size deposited were investigated. results show that light doping, resistivity, carrier concentration, mobility follow Seto’s model for polycrystalline material. However, with heavy these undergo a saturation trend. behavior can be understood terms rapid formation A-center complexes films. annealed 250°C 300°C. resistivity pure lightly doped increased annealing temperature, whereas concentration decreased. higher doping concentrations, decreased, showed improvement. These changes are attributed reduction lattice defect sites upon annealing. experimental interpreted modified version materials.
springer.com
harvard.edu
sci-hub.se 参考文章(9)
I GUNAL, M PARLAK, Current transport mechanisms in low resistive CdS thin films Journal of Materials Science: Materials in Electronics. ,vol. 1, pp. 9- 13 ,(1997) , 10.1023/A:1018540601482
M. V. Garcia‐Cuenca, J. L. Morenza, J. Esteve, Electron tunneling in heavily In‐doped polycrystalline CdS films Journal of Applied Physics. ,vol. 56, pp. 1738- 1743 ,(1984) , 10.1063/1.334170
P.C. Pande, G.J. Russell, J. Woods, The properties of electrophoretically deposited layers of CdS Thin Solid Films. ,vol. 121, pp. 85- 94 ,(1984) , 10.1016/0040-6090(84)90230-X
M K Karanjai, D Dasgupta, Photoconductive properties of dip-deposited CdS:Cu, Cl thin films sensitised in situ Journal of Physics D. ,vol. 21, pp. 1769- 1772 ,(1988) , 10.1088/0022-3727/21/12/018
Miwa Tsuji, Tetsuya Aramoto, Hideaki Ohyama, Takeshi Hibino, Kuniyoshi Omura, Characterization of CdS Thin-Film in High Efficient CdS/CdTe Solar Cells Japanese Journal of Applied Physics. ,vol. 39, pp. 3902- 3906 ,(2000) , 10.1143/JJAP.39.3902
E. Ebenezer, K. R. Murali, Mary Juliana Chockalingam, V. K. Venkatesan, Electrical properties of vacuum annealed CdS films Journal of Materials Science. ,vol. 23, pp. 3861- 3863 ,(1988) , 10.1007/BF01106804
John Y. W. Seto, The electrical properties of polycrystalline silicon films Journal of Applied Physics. ,vol. 46, pp. 5247- 5254 ,(1975) , 10.1063/1.321593
Su-Huai Wei, S. B. Zhang, Alex Zunger, First-principles calculation of band offsets, optical bowings, and defects in CdS, CdSe, CdTe, and their alloys Journal of Applied Physics. ,vol. 87, pp. 1304- 1311 ,(2000) , 10.1063/1.372014
A Romeo, D.L Bätzner, H Zogg, C Vignali, A.N Tiwari, Influence of CdS growth process on structural and photovoltaic properties of CdTe/CdS solar cells Solar Energy Materials and Solar Cells. ,vol. 67, pp. 311- 321 ,(2001) , 10.1016/S0927-0248(00)00297-X