n-Type KCu3S2 microbelts: optical, electrical, and optoelectronic properties
作者： Chunyan Wu , Wenjian Wang , Xingang Wang , Jun Xu , Linbao Luo
DOI: 10.1039/C4RA12541J
关键词: Schottky diode 、 Absorption spectroscopy 、 Ultraviolet photoelectron spectroscopy 、 Transistor 、 Analytical chemistry 、 Semiconductor 、 Materials science 、 Optoelectronics 、 Conductivity 、 Band gap 、 Diode
摘要: KCu3S2 microbelts with lengths up to 80 μm and widths of 200–800 nm have been synthesized using a composite-hydroxide mediated (CHM) approach their optical, electrical optoelectronic properties were systematically characterized for the first time. As-synthesized be semiconductors bandgap 1.64 eV by UV-vis absorption spectroscopy room-temperature PL spectroscopy. Ultraviolet photoelectron (UPS) transport bottom-gate field-effect transistor (FET) revealed n-type conduction conductivity as high ∼1.85 × 103 S cm−1. A KCu3S2/Au Schottky diode was fabricated, which showed turn-on voltage ∼0.3 V, rectification ratio ∼102 103, an ideality factor 2.1. The possessed photoresponse Ilight/Idark ∼ 50 rapid response time less than 0.5 s. systematical characterization sheds light on potential application photovoltaic or material.
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