Sub-bandgap spectral photo-response analysis of Ti supersaturated Si
作者： Eric García-Hemme , Rodrigo García-Hernansanz , J Olea , D Pastor , A Del Prado
DOI: 10.1063/1.4766171
关键词: Materials science 、 Metal–insulator transition 、 Supersaturation 、 Pulsed laser deposition 、 Band gap 、 Silicon 、 Electrical resistivity and conductivity 、 Conductance 、 Photoconductivity 、 Analytical chemistry
摘要: We have analyzed the increase of sheet conductance (ΔG□) under spectral illumination in high dose Ti implanted Si samples subsequently processed by pulsed-laser melting. Samples with concentration clearly above insulator-metal transition limit show a remarkably ΔG□, even higher than that measured silicon reference sample. This ΔG□ magnitude is contrary to classic understanding recombination centers action and supports lifetime recovery predicted for concentrations deep levels transition.
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