XPS study of the band alignment at ITO/oxide (n-type MoO3 or p-type NiO) interface
作者： J. C. Bernède , S. Houari , D. Nguyen , P. Y. Jouan , A. Khelil
关键词: Kelvin probe force microscope 、 Non-blocking I/O 、 Materials science 、 Heterojunction 、 Nanotechnology 、 Optoelectronics 、 X-ray photoelectron spectroscopy 、 Electronic band structure 、 Oxide 、 Semiconductor 、 Anode
摘要: … 3 is n-type, its band structure is still under study. Here, the band alignment at the interface of an ITO… used to measure the band offsets allows us to estimate the band discontinuities at the …
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