作者: Frankie F. Roohparvar
DOI:
关键词: Computer hardware 、 Parallel computing 、 Non-volatile random-access memory 、 Semiconductor memory 、 Memory map 、 Memory refresh 、 Interleaved memory 、 Bubble memory 、 Sense amplifier 、 Computer science 、 Registered memory
摘要: A synchronous flash memory includes an array of non-volatile cells. The is arranged in rows and columns, can be further addressable blocks. Data communication connections are used for bi-directional data with external device(s), such as a processor or other controller. write latch coupled between the buffer to provided on connections. one location, block, while read from second block. operations performed common row