Defect structure and electronic donor levels in stannic oxide crystals
作者： S. Samson , C. G. Fonstad
DOI: 10.1063/1.1662011
关键词: Oxygen 、 Hydrogen 、 Conductivity 、 Oxygen vacancy 、 Partial pressure 、 Inorganic chemistry 、 Chemistry 、 Oxide
摘要: … as a function of the oxygen partial pressure over the range 1-10-2 atm of oxygen and up to … defect identified as a doubly ionized oxygen vacancy dominates the conductivity; below 850…
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