Microscopic mechanism of leakage currents in silica junctions
作者： Xin Luo , Biao Wang , Yue Zheng
DOI: 10.1063/1.3236640
关键词: Condensed matter physics 、 Band gap 、 Electron transport chain 、 Density functional theory 、 Thermal conduction 、 Fermi level 、 Dangling bond 、 Leakage (electronics) 、 Nanotechnology 、 Materials science 、 Thin film
摘要: Combining the nonequilibrium Green's functions with the density-functional theory, we investigated the structural and electronic properties of silica junctions sandwiched between …
core.ac.uk
scitation.org
harvard.edu
aip.org 
researchgate.net 
sci-hub.se 参考文章(42)
D. A. Muller, T. Sorsch, S. Moccio, F. H. Baumann, K. Evans-Lutterodt, G. Timp, The electronic structure at the atomic scale of ultrathin gate oxides Nature. ,vol. 399, pp. 758- 761 ,(1999) , 10.1038/21602
K.L. Pey, C.H. Tung, M.K. Radhakrishnan, L.J. Tang, W.H. Lin, Dielectric breakdown induced epitaxy in ultrathin gate oxide - a reliability concern international electron devices meeting. pp. 163- 166 ,(2002) , 10.1109/IEDM.2002.1175804
Angus I. Kingon, Jon-Paul Maria, S. K. Streiffer, Alternative dielectrics to silicon dioxide for memory and logic devices Nature. ,vol. 406, pp. 1032- 1038 ,(2000) , 10.1038/35023243
Youn Sung Choi, Hyunwoo Park, Toshikazu Nishida, Scott E. Thompson, Reliability of HfSiON gate dielectric silicon MOS devices under [110] mechanical stress: Time dependent dielectric breakdown Journal of Applied Physics. ,vol. 105, pp. 044503- ,(2009) , 10.1063/1.3074299
S. Agnello, R. Boscaino, G. Buscarino, M. Cannas, F. M. Gelardi, Structural relaxation of E_gamma centers in amorphous silica Physical Review B. ,vol. 66, pp. 113201-1- 113201-4 ,(2002) , 10.1103/PHYSREVB.66.113201
Hiroaki Imai, Kazuo Arai, Hiroshi Imagawa, Hideo Hosono, Yoshihiro Abe, Two types of oxygen-deficient centers in synthetic silica glass Physical Review B. ,vol. 38, pp. 12772- 12775 ,(1988) , 10.1103/PHYSREVB.38.12772
J. H. Stathis, Reliability limits for the gate insulator in CMOS technology Ibm Journal of Research and Development. ,vol. 46, pp. 265- 286 ,(2002) , 10.1147/RD.462.0265
Mads Brandbyge, José-Luis Mozos, Pablo Ordejón, Jeremy Taylor, Kurt Stokbro, Density-functional method for nonequilibrium electron transport Physical Review B. ,vol. 65, pp. 165401- ,(2002) , 10.1103/PHYSREVB.65.165401
X. Li, C. H. Tung, K. L. Pey, The nature of dielectric breakdown Applied Physics Letters. ,vol. 93, pp. 072903- ,(2008) , 10.1063/1.2974792
Jeremy Taylor, Hong Guo, Jian Wang, Ab initio modeling of quantum transport properties of molecular electronic devices Physical Review B. ,vol. 63, pp. 245407- ,(2001) , 10.1103/PHYSREVB.63.245407