Passivation of yellow luminescence defects in GaN film by annealing and CF4 plasma treatment

摘要: In this study, we demonstrated that yellow luminescence (YL) defects can be mitigated with proper annealing or CF4 plasma treatment. Multiple material analyses, including X-ray diffraction (XRD), photoelectron spectroscopy (XPS), and surface roughness measurements were performed to investigate improvements in GaN film properties caused by Filling vacancies during the process incorporating fluorine atoms bond dangling bonds treatment may lessen YL decrease luminescence.