Direct evidence for structural transformation and higher thermal stability of amorphous insbte phase change material

摘要: Abstract The search for novel phase-change materials with enhanced electrical and thermal properties are utmost importance the development of reliable next-generation high-speed, non-volatile random access memory (NVRAM). In this paper, we investigate local structural change crystallization kinetics ternary InSbTe thin films using temperature-dependent resistivity measurement in situ X-ray diffraction by synchrotron radiation source. Our experimental results reveal that begins formation binary phases (InSb InTe). Furthermore, cubic In3SbTe2 phase is emerged at 300 °C remains stable up to 410 °C. calculated values texture coefficient indicate an increased orientation upon increasing temperature. Also, higher activation energy 5.2–5.6 eV observed Kissinger's method. These electrical, would be suitable high-speed NVRAMs as well multi-bit data storage applications.