Electrically-driven metal–insulator transition of vanadium dioxide thin films in a metal–oxide-insulator–metal device structure
作者： Dong-Hong Qiu , Qi-Ye Wen , Qing-Hui Yang , Zhi Chen , Yu-Lan Jing
DOI: 10.1016/J.MSSP.2014.06.030
关键词: Optoelectronics 、 Electric current 、 Fabrication 、 Oxide 、 Threshold voltage 、 Thin film 、 Insulator (electricity) 、 Materials science 、 Ohmic contact 、 Metal–insulator transition
摘要: Abstract We report the successful growth of vanadium dioxide (VO 2 ) films on SiO buffered metal electrode and fabrication metal–oxide-insulator–metal (MOIM) junction. The VO film has an abrupt thermal-induced metal–insulator transition (MIT) with a change resistance orders magnitude. electrically-driven MIT (E-MIT) switching characteristics have been investigated by applying perpendicular voltage to based MOIM device at particular temperatures, sharp jumps in electric current were observed I – V under low threshold 1.6 V. Ohmic behavior, non-Ohmic super-linear one, metallic regime are sequentially increase voltage. It is expected be significance exploring ultrafast electronic devices incorporating correlated oxides structure.
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