Ellipsometric study of silicon implanted with boron ions in low doses
作者： K. Watanabe , M. Miyao , I. Takemoto , N. Hashimoto
DOI: 10.1063/1.90848
关键词: Analytical chemistry 、 Radiochemistry 、 Silicon 、 Annealing (metallurgy) 、 Ellipsometry 、 Crystallographic defect 、 Ion 、 Ion implantation 、 Molar absorptivity 、 Materials science 、 Boron 、 Physics and Astronomy (miscellaneous)
摘要: Ellipsometry was applied to estimate crystal damage in silicon caused by boron‐ion implantation low doses. A highly sensitive parameter for is proposed which derived from the extinction coefficient of complex refractive index. Crystal ion at doses as 3×1011 cm−2 and annealing effect on heat treatment dry N2 ambient after were clearly detected parameter.
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