Pressure-Induced Metal-Semiconductor Transition and4fElectron Delocalization in Sm Te
作者： A. Jayaraman , V. Narayanamurti , E. Bucher , R. G. Maines
DOI: 10.1103/PHYSREVLETT.25.368
关键词: Conduction band 、 Metal semiconductor 、 Condensed matter physics 、 Infrared spectroscopy 、 Physics 、 Electron 、 Saturation (graph theory) 、 Absorption (logic) 、 Electrical resistivity and conductivity 、 Electron delocalization
摘要: The pressure variation of resistivity and optical absorption in SmTe has been studied. A continuous pressure-induced semiconductor-to-metal transition is observed, which we ascribe to the promotion electrons from $4f$ level into conduction band as gap between them shrinks with finally vanishes. deduced saturation ratio $\frac{\ensuremath{\rho}{(P)}_{\mathrm{sat}}}{\ensuremath{\rho}(0)}$ good agreement 0.62 \ifmmode\pm\else\textpm\fi{} 0.02 eV obtained infrared data.
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