Enhanced Raman scattering from silicon microstructures
作者： D. V. Murphy , S. R. J. Brueck
DOI: 10.1364/OL.8.000494
关键词: Light scattering 、 Optics 、 Coherent anti-Stokes Raman spectroscopy 、 X-ray Raman scattering 、 Raman scattering 、 Raman spectroscopy 、 Phonon scattering 、 Scattering 、 Materials science 、 Inelastic scattering
摘要: Electromagnetic-structure-resonance enhancement of scattering from Si phonon modes is reported for a number submicrometer structures. Enhancements greater, similar100 over the Raman intensity bulk are observed ~0.1-microm-diameter spheres. An analytic calculation this geometry in good qualitative agreement with experiment and demonstrates that arises coupling both incident scattered fields low-order-structure resonances high-index dielectric.
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