Interface induced transition from bipolar resistive switching to unipolar resistive switching in Au/Ti/GaOx/NiOx/ITO structures
作者： XL Chu , ZP Wu , DY Guo , YH An , YQ Huang
DOI: 10.1039/C5RA12762A
关键词: Soft breakdown 、 Voltage 、 Non-volatile memory 、 Optoelectronics 、 Resistive switching 、 Schottky barrier 、 Materials science 、 Low resistance
摘要: We report the transition from bipolar resistive switching (BRS) to unipolar (URS) in Au/Ti/GaOx/NiOx/ITO device at room temperature. After proper soft breakdown of p–n junctions (GaOx/NiOx), operation could be easily transferred BRS URS mode. The and behaviors are possibly related interfacial variation Ti/GaOx Schottky junction barrier GaOx/NiOx barrier, respectively. high/low resistance state can distinguished clearly switched reversibly under a train voltage pulses both modes. endurance characteristics show good reliability stored state. These results suggest potential for next generation nonvolatile memory applications.
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