Crystalline multiple-nanosheet III-V channel FETs
作者： Borna J. Obradovic , Mark. S. Rodder , Jorge A. Kittl
DOI:
关键词: Optoelectronics 、 Materials science 、 Gate oxide 、 Electrical engineering 、 Nanosheet 、 Layer (electronics) 、 Metal gate 、 Crystalline semiconductor 、 Gate dielectric 、 Communication channel 、 Field-effect transistor
摘要: A field effect transistor includes a body layer comprising crystalline semiconductor channel region therein, and gate stack on the region. The layer, dielectric between Related devices fabrication methods are also discussed.
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