IMPURITY DIFFUSION METHOD FOR IIIIV GROUP COMPOUND SEMICONDUCTOR REGION
作者： Adachi Eiichi , Ono Yuuichi , Nose Sachiyuki , Satou Hiroki
DOI:
关键词: Impurity 、 Condensed matter physics 、 Group (periodic table) 、 Impurity diffusion 、 Good control 、 Compound semiconductor 、 Diffusion (business) 、 Closed tube 、 Materials science
摘要: PURPOSE:ZnSs2 is used as diffusion source well closed tube system applied, so that impurity diffused with good control to III-V compound semiconductor and even PN-junction can be obtained.
lens.org 参考文章(2)
J Blum, K Shih, Open tube diffusion in iii-v compunds ,(1972)
W Jacobus, Method of forming integrated semiconductor devices with iii-v compounds ,(1971)