Plasma etching of silicon
作者： Daniel L. Flamm , David N. Wang , Dan Maydan
DOI:
关键词: Plasma etching 、 Isotropic etching 、 Etching (microfabrication) 、 Monocrystalline silicon 、 Analytical chemistry 、 Dry etching 、 Silicon 、 Optoelectronics 、 Polycrystalline silicon 、 Reactive-ion etching 、 Materials science
摘要: By utilizing a fluorine-containing gaseous compound in plasma etching process, isotropic of monocrystalline silicon (48) and doped or undoped polycrystalline (54) is achieved. The processes, which are applicable, for example, to pattern delineation the processing semiconductor wafers, substantially free any proximity effects characterized by high rate at relatively low power levels, selectivity (with respect to, dioxide) excellent uniformity. mixing other gases (for chlorine) with gas, amount undercutting achieved during process can be selectively controlled.
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