Method of refreshing a memory device utilizing PASR and piled refresh schemes

作者: Hwang Hur , Tae Yun Kim

DOI:

关键词: Scheme (programming language)Electronic engineeringComputer scienceMode (computer interface)

摘要: In a memory device having an N number of banks, refresh operation according to piled scheme is performed during self-refresh mode the banks in regular sequence when it necessary all banks. A Partial Array Self Refresh (PASR) only i (where 1

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