Outlooks for GaAs terrestrial photovoltaics

作者: J. M. Woodall , H. J. Hovel

DOI: 10.1116/1.568711

关键词: Electricity generationEnergy conversion efficiencyOptoelectronicsPhotovoltaicsSemiconductor deviceThin filmPhotovoltaic systemSchottky diodeMaterials science

摘要: GaAs photovoltaic device structure are examined as an attractive alternate to Si devices for large scale terrestrial power generation. The role of other III‐V and II‐VI compounds, particularly CdS, is also discussed. (AIP)

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