作者: J. M. Woodall , H. J. Hovel
DOI: 10.1116/1.568711
关键词: Electricity generation 、 Energy conversion efficiency 、 Optoelectronics 、 Photovoltaics 、 Semiconductor device 、 Thin film 、 Photovoltaic system 、 Schottky diode 、 Materials science
摘要: GaAs photovoltaic device structure are examined as an attractive alternate to Si devices for large scale terrestrial power generation. The role of other III‐V and II‐VI compounds, particularly CdS, is also discussed. (AIP)