Origin of surface electron accumulation and fermi level pinning in low energy ion induced InN/GaN heterostructure
作者： Monu Mishra , T.C. Shibin Krishna , Mukesh Kumar , Govind Gupta
DOI: 10.1016/J.MATCHEMPHYS.2015.06.037
关键词: Electronic structure 、 Heterojunction 、 Ion 、 Fermi level 、 X-ray photoelectron spectroscopy 、 Band offset 、 Substrate (electronics) 、 Band bending 、 Condensed matter physics 、 Materials science
摘要: Abstract InN/GaN heterostructure was fabricated via reactive low energetic Nitrogen ion (LENI at 300 eV) bombardment lower substrate temperature (350 °C). X-Ray Photoemission spectroscopic (XPS) and Atomic Force Microscopic (AFM) measurements were performed to analyse the electronic structure, surface chemistry, band alignment, morphology of grown heterostructure. XPS analysis revealed evolution InN structure with nitridation time, electron accumulation, fermi level pinning offset hetero structure. The valence conduction offsets (VBO & CBO) calculated be 0.49 ± 0.19 eV 2.21 ± 0.1 eV divulged formation a type-I heterojunction. A Fermi Level (FL) 1.5 ± 0.1 eV above minima perceived indicated towards strong downward bending. VB spectra suggested that accumulation occurred due presence metallic In-adlayer on which resulted in FL corresponding Microscopy smooth granular It also observed growth parameters (e.g. temperature) strongly influence aforementioned interfacial properties.
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