A high-performance triode-type carbon nanotube field emitter for mass production
作者： Nguyen Van Quy , Nguyen Duc Hoa , Myungchan An , Yousuk Cho , Dojin Kim
DOI: 10.1088/0957-4484/18/34/345201
关键词: Nanotechnology 、 Common emitter 、 Optoelectronics 、 Materials science 、 Current density 、 Electron 、 Triode 、 Voltage 、 Contact resistance 、 Carbon nanotube 、 Layer (electronics)
摘要: A triode-type field emission device based on carbon nanotubes (CNTs) synthesized an anodic aluminum oxide (AAO) template was fabricated. For the improvement of performance, in addition to basic advantages using AAO obtain uniform CNTs with strong adhesion, several considerations were taken into account, including highly crystalline through thermal chemical vapor deposition (CVD) at 1200 °C, lowering contact resistance a Ti buffer layer and reducing pixel size gate-to-emitter distance. The emitter showed high current density 20 mA cm−2 low turn-on voltage 16 V. very enhancement factor 1.6 × 106 cm−1 confirmed efficiency triode structure electron extraction.
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