Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1−xZrxO2-based structures

摘要: HfO2-based ferroelectrics have dramatically changed the application perspectives of polarization-switching materials for information processing and storage. Their CMOS compatibility preservation high reversible polarization down to a few nanometer thickness make them attractive various device concepts including non-volatile memories negative-capacitance-enhanced steep-slope transistors. In context these applications, long-standing discussion intrinsic (thermodynamic) or extrinsic nuclei-limited switching (NLS) in has recently gained importance. particular, negative capacitance effect that is formally described by Landau–Ginzburg–Devonshire formalism implies driven thermodynamic coercive field. On other hand, recent studies reported nucleation-limited switching, which does not result hysteresis-free effect. Here, we analyze response scale on ferroelectric/dielectric bilayer where been previously demonstrated. Our analysis two limiting cases quasi-static earlier ultra-fast supports reversal scenario. The this mechanism with NLS region-by-region remarkably low domain wall velocity addressed. results confirm usability CMOS-compatible polycrystalline HZO ferroelectric films gates operating negative-capacitance regime. Furthermore, they point towards possible solutions optimizing their properties applications memories.