Molecular beam epitaxy-surface and kinetic effects
作者： C. T. Foxon
DOI: 10.1080/10408438108243635
关键词: Kinetic energy 、 Optoelectronics 、 Analytical chemistry 、 Surface (mathematics) 、 Substrate (electronics) 、 Vacuum evaporation 、 Molecular beam epitaxy 、 Dopant 、 Chemical beam epitaxy 、 Materials science 、 Ultra-high vacuum
摘要: Abstract Molecular beam epitaxy (MBE) is a refined form of vacuum evaporation in which atomic and molecular beams impinge on heated substrate under ultra high conditions. The technique evolved from surface kinetic studies GaAs (1) Si(2) was subsequently used to grow films for device purposes. Because the two complementary aspects its development, many processes controlling both growth dopant incorporation MBE are quite well understood.
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