Compound semiconductor substrate grown on metal layer, method for manufacturing the same, and compound semiconductor device using the same
作者： Dong-Kun Lee , Doo-Soo Kim , Ho-Jun Lee , Yong-jin Kim
DOI:
关键词: Light emitting device 、 Electrode 、 Metal 、 Power consumption 、 Compound semiconductor 、 Substrate (printing) 、 Optoelectronics 、 Layer (electronics) 、 Epitaxy 、 Materials science
摘要: The present invention relates to a compound semiconductor substrate and method for manufacturing the same. provides which coats spherical balls on substrate, forms metal layer between balls, removes form openings, grows from openings. According invention, can be simplified grow high quality rapidly, simply inexpensively, as compared with conventional ELO (Epitaxial Lateral Overgrowth) or forming layer. And, serves one electrode of light emitting device reflecting film provide having reduced power consumption efficiency.
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