作者: P.R. Kinget
关键词: Analogue electronics 、 MOSFET 、 Circuit design 、 Electronic engineering 、 Noise (electronics) 、 Electronic circuit 、 Integrated circuit design 、 Electrical engineering 、 Bipolar junction transistor 、 Matching (statistics) 、 Engineering
摘要: Random device mismatch plays an important role in the design of accurate analog circuits. Models for matching MOS and bipolar devices from open literature show that improves with increasing area. As a result, accuracy requirements impose minimal area this paper explores impact constraint on performance general It results fixed bandwidth-accuracy-power tradeoff which is set by technology constants. This independent bias point circuits whereas some optimizations are possible. The limitations imposed compared to limits thermal noise. For power constraints due several orders magnitude higher than case noise comparable order magnitude. scaling conclusions work briefly explored.