Device mismatch and tradeoffs in the design of analog circuits

作者: P.R. Kinget

DOI: 10.1109/JSSC.2005.848021

关键词: Analogue electronicsMOSFETCircuit designElectronic engineeringNoise (electronics)Electronic circuitIntegrated circuit designElectrical engineeringBipolar junction transistorMatching (statistics)Engineering

摘要: Random device mismatch plays an important role in the design of accurate analog circuits. Models for matching MOS and bipolar devices from open literature show that improves with increasing area. As a result, accuracy requirements impose minimal area this paper explores impact constraint on performance general It results fixed bandwidth-accuracy-power tradeoff which is set by technology constants. This independent bias point circuits whereas some optimizations are possible. The limitations imposed compared to limits thermal noise. For power constraints due several orders magnitude higher than case noise comparable order magnitude. scaling conclusions work briefly explored.

参考文章(51)
A. Rodriguez-Vazquez, G. Linan, S. Espejo, R. Dominguez-Castro, Mismatch-induced tradeoffs and scalability of mixed-signal vision chips international symposium on circuits and systems. ,vol. 5, pp. 93- 96 ,(2002) , 10.1109/ISCAS.2002.1010648
K. Kattmann, J. Barrow, A Technique For Reducing Differential Non-linearity Errors In Flash A/D Converters international solid-state circuits conference. pp. 170- 171 ,(1991) , 10.1109/ISSCC.1991.689113
Willy M C Sansen, Kenneth R Laker, Design of analog integrated circuits and systems ,(1994)
Jürgen Oehm, Ulrich Grünebaum, Statistical Analysis and Optimization of a Bandgap Reference for VLSI Applications Analog Integrated Circuits and Signal Processing. ,vol. 29, pp. 213- 220 ,(2001) , 10.1023/A:1011217615169
W. Sansen, M. Steyaert, V. Peluso, E. Peeters, Toward sub 1 V analog integrated circuits in submicron standard CMOS technologies international solid-state circuits conference. pp. 186- 187 ,(1998) , 10.1109/ISSCC.1998.672428
H. Tuinhout, M. Pelgrom, R. Penning de Vries, M. Vertregt, Effects of metal coverage on MOSFET matching international electron devices meeting. pp. 735- 738 ,(1996) , 10.1109/IEDM.1996.554085