Spin-dependent phenomena and device concepts explored in (Ga,Mn)As
作者： T Jungwirth , J Wunderlich , V Novák , K Olejník , BL Gallagher
DOI: 10.1103/REVMODPHYS.86.855
关键词: Context (language use) 、 Physics 、 Magnetic semiconductor 、 Electrical current 、 Coupling (physics) 、 Nanotechnology 、 Spintronics 、 Spin (physics)
摘要: … SOT, the above-mentioned favorable characteristics of (Ga,… observations in the ferromagnetic semiconductor (Ga,Mn)As … , where a is the lattice constant in Ga1−xMnxAs.) At these Mn …
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