THE TEMPORAL DEVELOPMENT OF INSTABILITIES IN LOW LIGHT ACTIVATED GaAs SWITCHES
作者： J.S. Kenney , R.J. Allen , S. Ludwig , K.H. Schoenbach
DOI: 10.1109/MODSYM.1992.492634
关键词: Protein filament 、 Electrical breakdown 、 Optoelectronics 、 Semiconductor laser theory 、 Electric field 、 Gallium arsenide 、 Laser 、 Anode 、 Resistive touchscreen 、 Optics 、 Materials science
摘要: A diagnostic technique has been developed which allows us to record the temporal and spatial development of such external parameters as electric field, temperature electron-hole density in gallium arsenide photoconductive switches. An electrical breakdown due a current filament was found cause permanent at constant forward voltage after laser activation. The with densities exceeding 60 kA/cm2 originates anode causesing damage form resistive spike this contact. Successive shots filamentary mode lead pattern spreading over surface ultimately could limit lifetime switch.
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