作者: M.A. Cirit
DOI: 10.1109/43.39064
关键词: Topology 、 Capacitive sensing 、 Charge conservation 、 Electronic engineering 、 Equivalent circuit 、 Engineering 、 Charge (physics) 、 Capacitance 、 Transistor 、 Electronic circuit simulation 、 Electric charge
摘要: A new approach to computer simulation of capacitance effects in MOS transistors is presented. It shown that charge nonconservation the result faulty mathematical modeling capacitive nonlinearities SPICE circuit simulator and not intrinsic any specific or model. The correct model described. results simulations using Meyer model, which conserves charge, are given for some test circuits. >