Optoelectronic properties of GaN, AlN, and GaAlN alloys
作者： Mingzhu Yang , Benkang Chang , Guanghui Hao , Honggang Wang , Meishan Wang
DOI: 10.1016/J.IJLEO.2015.07.096
关键词: Semiconductor 、 Wavelength 、 Optoelectronics 、 Mulliken population analysis 、 Direct and indirect band gaps 、 Density of states 、 Electronic band structure 、 Band gap 、 First principle 、 Materials science
摘要: Abstract As advanced semiconductor materials, GaN, AlN, and GaAlN alloys are widely used in optoelectronic devices. In order to research the properties of Ga1−xAlxN with different Al component, models Ga0.875Al0.125N, Ga0.750Al0.250N, Ga0.625Al0.375N, Ga0.500Al0.500N, AlN were built, then atomic structure, band density states, Mulliken charge distribution, optical six crystals calculated based on first principle calculations. Results show that lattice parameters decrease while gap increases increase component. The all semiconductors direct gap. global transfer index When component is bigger bigger, absorption peak shifts higher energy, threshold wavelength decreases.
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