The interaction of gold with gallium arsenide
作者： Victor G. Weizer , Navid S. Fatemi
DOI: 10.1063/1.341240
关键词: Annealing (metallurgy) 、 Chemical physics 、 Crystallite 、 Free surface 、 Reaction rate 、 Metal 、 Chemistry 、 Diffusion process 、 Gallium arsenide 、 Solar cell
摘要: Gold and gold‐based alloys, commonly used as solar‐cell contact materials, are known to react readily with gallium arsenide. Experiments designed identify the mechanisms involved in these GaAs‐metal interactions have yielded several interesting results. It is shown that reaction of GaAs gold takes place via a dissociative diffusion process. further rate controlled very great extent by condition free surface metal, an example which previously unexplained increase has been observed for samples annealed vacuum environment compared those gaseous ambient. A number other hard‐to‐explain observations, such low‐temperature formation voids lattice crystallite growth on surface, also explained invoking this mechanism.
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