Low temperature p+ nc-Si:H window layers for large area thin-film solar cells

摘要: Hydrogenated nanocrystalline silicon (nc-Si:H) has attracted attention recently over amorphous (a-Si:H) for use in thin-film solar cell applications primarily due to its higher stability and light absorbing capacity. In addition, there is increasing interest device fabrication on low-cost, weight flexible substrates where optimizing deposition conditions of nc-Si:H thin films at low substrate temperatures (< 200 O C ) poses challenges. such cells, the boron-doped (p') window layer significantly determines crystalline growth overlying intrinsic absorber layer, quality which eventually governs performance. h this research, material properties p+ (50 300 nm) were investigated. Samples deposited using plasma enhanced chemical vapor (PECVD) (75 or 150 OC) with various RF power andlor pressure conditions. Results from characterization experiments feasibility incorporating low-temperature pf as layers are discussed.