Literal Gate Using Resonant Tunneling Diodes
作者： Hyung-Tae Kim , Kwang-Seok Seo
DOI:
关键词: Engineering 、 Yield (engineering) 、 Diode 、 Electrical engineering 、 Literal (computer programming) 、 Optoelectronics 、 Quantum tunnelling
摘要: The present invention relates to a literal gate using resonant tunneling diodes; and, more particularly, only diodes (RTDs). has an advantage in that it can provide diodes, fewer elements than convention gate, utmost utilizing the input-output characteristics of RTD, and reducing fabricating costs improving yield.
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