Method for writing data into flash memory and associated memory device and flash memory
作者： Tsung Chieh Yang
DOI:
关键词: Flash file system 、 Racetrack memory 、 Computer science 、 Universal memory 、 Semiconductor memory 、 Non-volatile random-access memory 、 Bubble memory 、 Computer hardware 、 Flash memory 、 Computer memory
摘要: The present invention provides a method for writing data into flash memory, wherein the memory is Triple-Level Cell and each storage unit of implemented by floating-gate transistor supports eight write voltage levels, includes: adjusting bit to generate pseudo-random sequence; sequence with only two specific levels levels.
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