Planar field effect transistor structure and method
作者： Thomas W. Dyer
DOI:
关键词: Silicon 、 Substrate (electronics) 、 Planar 、 Trench 、 Field-effect transistor 、 Structural engineering 、 Transistor 、 Epitaxy 、 Optoelectronics 、 Semiconductor 、 Materials science
摘要: Disclosed is a transistor that incorporates epitaxially deposited source/drain semiconductor films and method for forming the transistor. A crystallographic etch used to form recesses between channel region trench isolation regions in silicon substrate. Each recess has first side, having profile, adjacent second region. The ensures profile angled so all of exposed surfaces comprise silicon. Thus, can be filled by epitaxial deposition without divot formation. Additional process steps ensure side formed with different enhances desired stress
lens.org 参考文章(18)
Anthony J. Lochtefeld, Matthew T. Currie, Shallow trench isolation process ,(2004)
Saleem H. Zaidi, Nanostructures for hetero-expitaxial growth on silicon substrates ,(2002)
Huilong Zhu, Haining S. Yang, Method and structure for controlling stress in a transistor channel ,(2004)
Robert S. Chau, Tahir Ghani, Anand Murthy, Kaizad R. Mistry, Semiconductor transistor having a stressed channel ,(2003)
Anthony J. Lochtefeld, Thomas A. Langdo, Methods of fabricating semiconductor structures having epitaxially grown source and drain elements ,(2006)
Hidenobu Fukutome, Tomohiro Kubo, Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor device ,(2010)
Wen-Han Hung, Tzyy-Ming Cheng, Shyh-Fann Ting, Li-Shian Jeng, Cheng-Tung Huang, Semiconductor structure and fabrication thereof ,(2006)
Liang-Gi Yao, Mong-Song Liang, Shih-Chang Chen, Ming-Fang Wang, Tien-Chih Chang, Noble high-k device ,(2004)
Antonio Luis Pacheco Rotondaro, Trace Q. Hurd, Elisabeth Marley Koontz, Crystallographic preferential etch to define a recessed-region for epitaxial growth ,(2007)