A method of filling a via or recess in a semiconductor substrate
作者： John Macneil
DOI:
关键词: Etching 、 Dielectric layer 、 Layer (electronics) 、 Composite material 、 Materials science 、 Metal 、 Electronic engineering 、 Substrate (electronics)
摘要: This invention relates to a method of filling via or recess in semiconductor substrate including: (i) depositing forming sacrificial layer on functional dielectric layer; (ii) etching through the and layers; (iii) metal onto by: (iv) lifting off ablating deposited surface (v) repeating steps until vias recesses are at least full metal; (vi) removing any remaining excess metal.
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