A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput
作者： Kwang-Jin Lee , Beak-Hyung Cho , Woo-Yeong Cho , Sangbeom Kang , Byung-Gil Choi
DOI: 10.1109/ISSCC.2007.373499
关键词: Throughput (business) 、 Computer science 、 CMOS 、 Computer hardware 、 Core (graph theory) 、 Diode
摘要: A 512Mb diode-switch PRAM is developed in a 90nm CMOS technology. core configuration, read/write circuit techniques, and charge-pump system for the are described. Through these schemes, achieves read throughput of 266MB/S maximum write 4.64MB/S with 1.8V supply.
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