On a Schottky diode-type hydrogen sensor with pyramid-like Pd nanostructures

作者: Po-Cheng Chou , Huey-Ing Chen , I-Ping Liu , Wei-Cheng Chen , Chun-Chia Chen

DOI: 10.1016/J.IJHYDENE.2015.05.036

关键词: NanotechnologySurface roughnessHydrogenAdsorptionSchottky diodeFabricationTransient responseNanostructureHydrogen sensorMaterials science

摘要: Abstract A new Pd/AlGaN/GaN Schottky diode-type hydrogen sensor with pyramid-like Pd nanostructures is fabricated and studied comprehensively. The employed cause the substantial increase of surface roughness surface-to-volume aspect ratio which give remarkable adsorption sites on for molecules. Experimentally, device demonstrates enhanced sensing performance, including a large forward-bias current variation 1.95 × 10 −6  A high response 1454 under an introduced 1% H 2 /air gas at 300 K. These properties are remarkably superior to those conventional planar-surface device. In addition, improved detection limit 10 ppb H 300 K found nanostructures. related characteristics transient responses steady-state analysis also in this work. Therefore, based advantages low-cost, easy fabrication, solid stability operation, shows promise high-performance applications.

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