Efficient Carrier Confinement in Deep-Ultraviolet Light-Emitting Diodes With Composition-Graded Configuration
作者： Jih-Yuan Chang , Hui-Tzu Chang , Ya-Hsuan Shih , Fang-Ming Chen , Man-Fang Huang
关键词: Ultraviolet light emitting diodes 、 Quantum 、 Optoelectronics 、 Leakage (electronics) 、 Electric potential 、 Diode 、 Potential barrier height 、 Light-emitting diode 、 Materials science 、 Current density
摘要: Characteristics of deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated. DUV LEDs possess severe electron current leakage due to insufficient carrier confinement the active region. Simply increasing Al composition quantum barriers (QBs) or electron-blocking layer (EBL) enlarge relevant potential barrier height would arise unexpected detrimental effects, such as extra polarization effect more obstruction for hole injection. In this paper, band-engineered composition-graded QBs and EBL proposed resolve issue. Simulation results show that, with appropriate designs, could be effectively diminished just slight side effects.
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