Growth of high quality Zn0.9Mg0.1O films on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy
作者： S.S. Chen , Z.Z. Ye , H.H. Zhang , X.H. Pan , P. Ding
DOI: 10.1016/J.APSUSC.2013.04.071
关键词: Materials science 、 Sapphire 、 Molecular beam epitaxy 、 Transmission electron microscopy 、 Epitaxy 、 Crystallography 、 Band gap 、 Dislocation 、 Luminescence 、 Reflection (mathematics)
摘要: Abstract We report the growth and characterization of single-crystalline, epitaxial Zn 0.9 Mg 0.1 O films on c-plane sapphire substrates with MgO buffer layer by plasma-assisted molecular beam epitaxy. The quality epilayers is evidenced a Hall mobility more than 60 cm 2 V −1 s at room temperature an X-ray diffraction (XRD) rocking curve full-width half-maximum 47 arcsec for (0 0 0 2) reflection. A screw dislocation density 4 × 10 6 cm −2 estimated XRD. Transmission electron microscopy revealed that thickness about 3.5 nm, highly c -axis oriented reflection corresponding to wurtzite-phase observed. Alloying found widen bandgap energy ZnO, luminescence observed 3.502 eV low temperature.
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Thomas A. Wassner, Bernhard Laumer, Stefan Maier, Andreas Laufer, Bruno K. Meyer, Martin Stutzmann, Martin Eickhoff, Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy Journal of Applied Physics. ,vol. 105, pp. 023505- ,(2009) , 10.1063/1.3065535
Ü Özgür, Ya I Alivov, Chunli Liu, A Teke, MA Reshchikov, S Doğan, V Avrutin, S-J Cho, H Morkoc, None, A comprehensive review of ZnO materials and devices Journal of Applied Physics. ,vol. 98, pp. 041301- ,(2005) , 10.1063/1.1992666
A. El-Shaer, A. Bakin, M. Al-Suleiman, S. Ivanov, A. Che Mofor, A. Waag, Growth of wide band gap wurtzite ZnMgO layers on (0001) Al2O3 by radical-source molecular beam epitaxy Superlattices and Microstructures. ,vol. 42, pp. 129- 133 ,(2007) , 10.1016/J.SPMI.2007.04.063
Sheng Chu, Muhammad Morshed, Lin Li, Jian Huang, Jianlin Liu, None, Smooth surface, low electron concentration, and high mobility ZnO films on c-plane sapphire Journal of Crystal Growth. ,vol. 325, pp. 36- 40 ,(2011) , 10.1016/J.JCRYSGRO.2011.04.036
D. I. Florescu, J. C. Ramer, D. S. Lee, E. A. Armour, InGaN∕GaN single-quantum-well light-emitting diodes optical output efficiency dependence on the properties of the barrier layer separating the active and p-layer regions Applied Physics Letters. ,vol. 84, pp. 5252- 5254 ,(2004) , 10.1063/1.1765743
Yuji Matsumoto, Makoto Murakami, Zhengwu Jin, Akira Ohtomo, Mikk Lippmaa, M. Kawasaki, Hideomi Koinuma, Combinatorial Laser Molecular Beam Epitaxy (MBE) Growth of Mg-Zn-O Alloy for Band Gap Engineering Japanese Journal of Applied Physics. ,vol. 38, pp. L603- L605 ,(1999) , 10.1143/JJAP.38.L603
I. Ohkubo, A. Ohtomo, T. Ohnishi, Y. Mastumoto, H. Koinuma, M. Kawasaki, In-plane and polar orientations of ZnO thin films grown on atomically flat sapphire Surface Science. ,vol. 443, ,(1999) , 10.1016/S0039-6028(99)01024-9
Hiroyuki Kato, Michihiro Sano, Kazuhiro Miyamoto, Takafumi Yao, High-quality ZnO epilayers grown on Zn-face ZnO substrates by plasma-assisted molecular beam epitaxy Journal of Crystal Growth. ,vol. 265, pp. 375- 381 ,(2004) , 10.1016/J.JCRYSGRO.2004.02.021
Christoph Bergemann, Publisher’s Note: “Exact voltage and current distribution in the rectangular geometry” [J. Appl. Phys.98, 043707 (2005)] Journal of Applied Physics. ,vol. 98, pp. 089901- ,(2005) , 10.1063/1.2112807
A. Setiawan, H.J. Ko, T. Yao, Effects of annealing of MgO buffer layer on structural quality of ZnO layers grown by P-MBE on c-sapphire Materials Science in Semiconductor Processing. ,vol. 6, pp. 371- 374 ,(2003) , 10.1016/J.MSSP.2003.05.002