High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination

摘要: This letter reports the first implementation of a hydrogen-plasma-based edge termination technique (HPET) in vertical GaN p-n power diodes grown on bulk substrates using metalorganic chemical vapor deposition. The device with 9- $\mu \text{m}$ -thick drift layer exhibited high breakdown voltage ( ${V}_{\textsf {bd}}$ ) 1.57 kV, low ON-resistance ${R}_{\mathrm{ ON}}$ 0.45 $\text{m}\Omega ~ \cdot $ cm2 (or 0.70 ~\cdot current spreading considered) and Baliga’s figure-of-merit ${V}^{\textsf {2}}_{\textsf {bd}}/{R}_{\mathrm{ 5.5 GW/cm2 3.6 GW/cm2) without passivation or field plate, which are close to theoretical limit GaN. enabled significant reduction leakage (~106 times at −300 V) huge enhancement (from ~300 V kV). Furthermore, showed good forward characteristics turn-ON 3.5 V, an ON-current ~2 kA/cm2 1.3 kA/cm2), ON/OFF ratio ~109, ideality factor 1.4. work shows HPET can serve as effective, cost, easy-to-implement for diodes.