作者: A.H. Slocum , A.C. Weber
DOI: 10.1109/JMEMS.2003.820289
关键词: Materials science 、 Surface micromachining 、 Optoelectronics 、 Wafer 、 Wafer bonding 、 Deep reactive-ion etching 、 Reactive-ion etching 、 Electronic engineering 、 Integrated circuit 、 Etching (microfabrication) 、 Microelectromechanical systems
摘要: A passive mechanical wafer alignment technique, capable of micron and better accuracy, was developed, fabricated tested. This technique is based on the principle elastic averaging: It uses mating pyramid (convex) groove (concave) elements, which have been previously patterned wafers, to passively align wafers each other as they are stacked. The concave convex elements were micro machined 4-in (100) silicon using wet anisotropic (KOH) etching deep reactive ion etching. Submicron repeatability accuracy order one shown through testing. Repeatability also measured a function number engaged elements. Submicrometer achieved with little eight Potential applications this precision for bonding multiwafer MEMS devices three-dimensional (3-D) interconnect integrated circuits (ICs), well one-step simultaneous multiple stacks. Future work will focus minimizing size