Precision passive mechanical alignment of wafers

作者: A.H. Slocum , A.C. Weber

DOI: 10.1109/JMEMS.2003.820289

关键词: Materials scienceSurface micromachiningOptoelectronicsWaferWafer bondingDeep reactive-ion etchingReactive-ion etchingElectronic engineeringIntegrated circuitEtching (microfabrication)Microelectromechanical systems

摘要: A passive mechanical wafer alignment technique, capable of micron and better accuracy, was developed, fabricated tested. This technique is based on the principle elastic averaging: It uses mating pyramid (convex) groove (concave) elements, which have been previously patterned wafers, to passively align wafers each other as they are stacked. The concave convex elements were micro machined 4-in (100) silicon using wet anisotropic (KOH) etching deep reactive ion etching. Submicron repeatability accuracy order one shown through testing. Repeatability also measured a function number engaged elements. Submicrometer achieved with little eight Potential applications this precision for bonding multiwafer MEMS devices three-dimensional (3-D) interconnect integrated circuits (ICs), well one-step simultaneous multiple stacks. Future work will focus minimizing size

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