作者: Shuji Nakamura , Gerhard Fasol
DOI:
关键词: Vertical-cavity surface-emitting laser 、 Laser 、 Blue laser 、 Optoelectronics 、 Gallium nitride 、 Materials science 、 Light-emitting diode 、 Diode-pumped solid-state laser 、 Far-infrared laser 、 Semiconductor laser theory
摘要: Physics of gallium nitrides and related compounds GaN growth p-Type obtained by electron beam irradiation n-Type InGaN Zn Si co-doped InGaN/AlGaN double-heterostructure blue blue-green LEDs inGaN single-quantum-well structure room-temperature pulsed operation laser diodes emission mechanisms LDs room temperature CW MQW latest results - lasers with self-organized quantum dots.