Experimental evidence of the existence of multiple charged states at Al2O3/GaN interfaces
作者： Noriyuki Taoka , Toshiharu Kubo , Toshikazu Yamada , Takashi Egawa , Mitsuaki Shimizu
关键词: Condensed matter physics 、 Charge (physics) 、 Acceptor 、 Mos capacitor 、 Band gap 、 Capacitor 、 Electron trapping 、 Atomic layer deposition 、 Deposition (law) 、 Materials science
摘要: The electrical properties of metal-oxide-semiconductor (MOS) capacitors with Al2O3/GaN interfaces formed by atomic layer deposition at various temperatures (T d ) were systematically investigated through comparison the interface a Si MOS capacitor. Although trap densities (D it for GaN are almost same as capacitor, surface potential fluctuation (σ s T much larger than Comparison between theoretical calculation related to σ and measured results clarified that energy dependences in bandgap cannot be explained electron trapping traps single acceptor nature (0/−). We found result is experimental evidence existence multiple charge states interfaces. suggests may difficult obtain good carrier transport future devices structure.
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