ITO spin-coated porous silicon structures
作者： K Daoudi , C.S Sandu , A Moadhen , C Ghica , B Canut
DOI: 10.1016/S0921-5107(02)00693-1
关键词: Rutherford backscattering spectrometry 、 Photoluminescence 、 Deposition (law) 、 Transmission electron microscopy 、 Sol-gel 、 Analytical chemistry 、 Porous silicon 、 Spin coating 、 Indium tin oxide 、 Materials science 、 Chemical engineering
摘要: Abstract Porous silicon (PS)-based structures were formed by deposition of an indium tin oxide (ITO) onto PS surface using the sol–gel spin coating route. Two types thermal annealing processes, classical and rapid annealing, used in order to crystallise ITO films. The initial photoluminescence layers is partly preserved. morphology ITO/PS structure was investigated cross-sectional transmission electron microscopy (XTEM) Rutherford backscattering spectrometry (RBS) measurements.
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