Isolated arsenic-antisite defect in GaAs and the properties of EL2.
作者： Jaroslaw Dabrowski , Matthias Scheffler
DOI: 10.1103/PHYSREVB.40.10391
关键词: Electronic structure 、 Inorganic compound 、 Arsenic 、 Local-density approximation 、 Electron density 、 Infrared spectroscopy 、 Materials science 、 Jahn–Teller effect 、 Ground state 、 Condensed matter physics
摘要: … This force constant is similar to that of the other deep defects in semiconductors … The moderateoutwards breathing relaxation of the Aso, antisite of about 4%, found in our calculations, …
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