作者: A. Pinczuk , J.M. Worlock
DOI: 10.1016/0039-6028(82)90564-7
关键词: Light scattering 、 Inelastic scattering 、 Doping 、 Heterojunction 、 Semiconductor 、 Atomic physics 、 Spectral line 、 Electron 、 Field (physics) 、 Materials science 、 Condensed matter physics
摘要: Abstract We discuss recent work on resonant inelastic light scattering by multilayer and single-layer two-dimensional electron gases in semiconductors. The systems occur doped multiple -quantum-well GaAs(AlGa)As heterostructures. single layers are at (GaAs-(AlGa)As heterojunctions; InAsMOS interfaces. Light spectra display a wealth of information related to intersubband excitations. consider detail the depolarization field effects collective electron-electron interactions: correlations between spectral line shapes transport properties.