Light scattering by two-dimensional electron systems in semiconductors

作者: A. Pinczuk , J.M. Worlock

DOI: 10.1016/0039-6028(82)90564-7

关键词: Light scatteringInelastic scatteringDopingHeterojunctionSemiconductorAtomic physicsSpectral lineElectronField (physics)Materials scienceCondensed matter physics

摘要: Abstract We discuss recent work on resonant inelastic light scattering by multilayer and single-layer two-dimensional electron gases in semiconductors. The systems occur doped multiple -quantum-well GaAs(AlGa)As heterostructures. single layers are at (GaAs-(AlGa)As heterojunctions; InAsMOS interfaces. Light spectra display a wealth of information related to intersubband excitations. consider detail the depolarization field effects collective electron-electron interactions: correlations between spectral line shapes transport properties.

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