Pseudogap, van Hove Singularity, Maximum in Entropy and Specific Heat for Hole-Doped Mott Insulators

作者: A. Reymbaut , P. Sémon , M. Charlebois , S. Bergeron , R. Garioud

DOI: 10.1103/PHYSREVRESEARCH.1.023015

关键词: Mott insulatorPhysicsHubbard modelPhase transitionVan Hove singularityPseudogapKnight shiftCuprateCondensed matter physicsMott transition

摘要: The first indication of a pseudogap in cuprates came from sudden decrease NMR Knight shift at doping-dependent temperature $T^*(\delta)$. Since then, experiments have found phase transitions lower $T^*_\text{phase}(\delta)$. Using plaquette cellular dynamical mean-field for the square-lattice Hubbard model high temperature, where results are reliable, we show that $T^*(\delta)$ shares many features remarkable agreement with several experiments, including quantum critical behavior electronic specific heat, supports view is controlled by finite-doping extension Mott transition. We propose further experimental tests.

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